View 2SC4626J_283959.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Transistors
2SC4626J
Silicon NPN epitaxial planar type
Unit: mm
1.60+0.05 -0.03 1.000.05
0.800.05
For high-frequency amplification Features
* Optimum for RF amplification of FM/AM radios * High transition frequency fT * SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
0.12+0.03 -0.01
3
1.600.05 0.85+0.05 -0.03 (0.375)
1 0.270.02
2
(0.80)
(0.50)(0.50)
0 to 0.02
Absolute Maximum Ratings Ta = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 5 30 125 125 -55 to +125 Unit V V V mA mW C C
5
0.70+0.05 -0.03
5
1: Base 2: Emitter 3: Collector
EIAJ: SC-89 SSMini3-F1 Package
Marking Symbol: V
Electrical Characteristics Ta = 25C 3C
Parameter Collector cutoff current DC current gain * Gain bandwidth product Reverse transfer impedance Common emitter reverse transfer capacitance Noise figure Note) *: hFE rank classification Rank hFE B 70 to 140 C 110 to 220 No rank 70 to 220 Symbol ICBO hFE fT Zrb Cre NF Conditions VCB = 10 V, IE = 0 VCB = 10 V, IE = -1 mA VCB = 10 V, IE = -1 mA, f = 200 MHz VCB = 10 V, IE = -1 mA, f = 2 MHz VCB = 10 V, IE = -1 mA, f = 10.7 MHz VCB = 10 V, IE = -1 mA, f = 5 MHz 70 150 250 22 0.9 2.8 50 1.5 4.0 Min Typ Max 0.1 220 MHz pF dB Unit A
0.10 max.
Publication date: July 2002
SJC00281AED
1
2SC4626J
PC Ta
140
IC VCE
16 14 Ta = 25C IB = 100 A 80 A
100 90 80 VCE = 10 V Ta = 25C
IC I B
Collector power dissipation PC (mW)
120
Collector current IC (mA)
12 10 8 6 4 2 0
100 80 60 40 20 0
Collector current IC (mA)
12
70 60 50 40 30 20 10
60 A
40 A
20 A
0
20
40
60
80
100 120 140
0
2
4
6
8
10
0
0
2
4
6
8
10
12
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
IB VBE
90 80 70 VCE = 10 V Ta = 25C
120
IC VBE
Collector to emitter saturation voltage VCE(sat) (V)
VCE = 10 V
10
VCE(sat) IC
IC / IB = 10
100
Collector current IC (mA)
Base current IB (mA)
60 50 40 30 20 10 0
80
Ta = 85C
1
Ta = 85C
60 25C 40 -25C
25C 0.1
-25C
20
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
1 000
Base to emitter voltage VBE (V)
Base to emitter voltage VBE (V)
Collector current IC (mA)
hFE IC
250
Cob VCB
10
VCE = 10 V
200
Ta = 85C
150
25C -25C
100
50
Collector output capacitance Cob (pF)
f = 1 MHz Ta = 25C
DC current gain hFE
0
1
1 10 100
0
5
10
15
20
25
30
35
Collector current IC (mA)
Collector to base voltage VCB (V)
2
SJC00281AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

▲Up To Search▲

Price & Availability of 2SC4626J

	To Download 2SC4626J Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .